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MMDT4413
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
* * * * * * * Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5)
K A
C2 B1 E1
SOT-363 Dim
BC
Min 0.10 1.15 2.00 0.30 1.80 -- 0.90 0.25 0.10 0
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
A B C D F
M
E2
B2
C1
0.65 Nominal
H
Mechanical Data
* * * * * * * * * Case: SOT-363 Case Material: Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 6 Ordering & Date Code Information: See Page 6 Weight: 0.006 grams (approximate)
H J K L M
J
D
F
L
Note: E1, B1, and C1 = PNP 4403 Section, E2, B2, and C2 = NPN 4401 Section. Type marking indicates orientation
C2 B1 E1
All Dimensions in mm
E2
B2
C1
Maximum Ratings, Total Device
Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
@TA = 25C unless otherwise specified Symbol (Note 1, 2) (Note 1) Pd RJA Tj, TSTG @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO (Note 1) IC NPN4401 60 40 6.0 600 Unit V V V mA Value 200 625 -55 to +150 Unit mW C/W C
Maximum Ratings, NPN 4401 Section
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous
Maximum Ratings, PNP 4403 Section
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous
Notes: 1. 2. 3. 4. 5.
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO PNP4403 -40 -40 -5.0 -600 Unit V V V mA
(Note 1)
IC
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Maximum combined dissipation. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30121 Rev. 10 - 2
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Electrical Characteristics, NPN 4401 Section
Characteristic OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 6) 20 40 80 100 40 0.75 1.0 0.1 40 1.0 250 V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 Symbol Min
@TA = 25C unless otherwise specified Max 100 100 300 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 Unit V V V nA nA Test Condition IC = 100A, IE = 0 IC = 1.0mA, IB = 0 IE = 100A, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V IC = 100A, IC = 1.0mA, IC = 10mA, IC = 150mA, IC = 500mA, VCE = VCE = VCE = VCE = VCE = 1.0V 1.0V 1.0V 1.0V 2.0V
DC Current Gain
hFE
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
Notes: 6.
VCE(SAT) VBE(SAT)
V V
IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
-4
Ccb Ceb hie hre hfe hoe fT
pF pF k x 10 S MHz
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 10V, IC = 20mA, f = 100MHz VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA
td tr ts tf

15 20 225 30
ns ns ns ns
Short duration pulse test used to minimize self-heating effect.
DS30121 Rev. 10 - 2
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Electrical Characteristics, PNP 4403 Section
Characteristic OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 6) 30 60 100 100 20 -0.75 1.5 0.1 60 1.0 200 V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL -40 -40 -5.0 Symbol Min
@TA = 25C unless otherwise specified Max -100 -100 300 -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 15 20 225 30 Unit V V V nA nA Test Condition IC = -100A, IE = 0 IC = -1.0mA, IB = 0 IE = -100A, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V
DC Current Gain
hFE
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0
-4
Ccb Ceb hie hre hfe hoe fT td tr ts tf
pF pF k x 10 S MHz ns ns ns ns
VCE = -10V, IC = -1.0mA, f = 1.0kHz
VCE = -10V, IC = -20mA, f = 100MHz VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA
DS30121 Rev. 10 - 2
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MMDT4413
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30
VCE, COLLECTOR-EMITTER VOLTAGE (V)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100
20
CAPACITANCE (pF)
10
5.0
1.0 0.1
1.0 10 REVERSE VOLTS (V) Fig. 1 Typical Capacitance (4401)
50
IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region (4401)
1,000
0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
IC IB = 10
hFE, DC CURRENT GAIN
TA = 125C
0.4
TA = 25C
100
TA = -25C T A = +25C
0.3
TA = 150C
0.2
10
0.1
T A = -50C
1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current (4401) 0.1
1
1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current (4401) 1
1,000 fT, GAIN BANDWIDTH PRODUCT (MHz)
0
1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Base Emitter Voltage vs. Collector Current (4401) 0.1
VCE = 5V TA = -50C
VCE = 5V
100
10
100 10 IC, COLLECTOR CURRENT (mA) Fig. 6 Gain Bandwidth Product vs. Collector Current (4401) 1
1
DS30121 Rev. 10 - 2
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30
1.6 VCE COLLECTOR-EMITTER VOLTAGE (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 1 100 0.1 10 0.01 IB, BASE CURRENT (mA) Fig. 8 Typical Collector Saturation Region (4403)
20
Cibo
CAPACITANCE (pF)
10
5.0
Cobo
1.0 -0.1
-1.0 -10 REVERSE VOLTS (V) Fig. 7 Typical Capacitance (4403)
-30
0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
IC IB = 10
1,000 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8
TA = -50C VCE = 5V
0.4
0.3
TA = 25C
0.7 0.6 0.5 0.4 0.3 0.2 0.1
TA = 25C
0.2
TA = 150C
TA = 150C
0.1
TA = 50C
10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Collector Emitter Saturation Voltage vs. Collector Current (4403)
1,000
VCE = 5V
0
1
10 100 1 IC, COLLECTOR CURRENT (mA) Fig. 10 Base-Emitter Voltage vs. Collector Current (4403)
1,000 fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
hFE, DC CURRENT GAIN
100
100
10
10
1
1
10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 11 DC Current Gain vs. Collector Current (4403)
10 100 IC, COLLECTOR CURRENT (mA) Fig. 12 Gain Bandwidth Product vs. Collector Current (4403)
1
1
DS30121 Rev. 10 - 2
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MMDT4413
(c) Diodes Incorporated
400 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 150 175 200
75
100
125
TA, AMBIENT TEMPERATURE (C) Fig. 13 Max Power Dissipation vs. Ambient Temperature (Total Device)
Ordering Information
Device MMDT4413-7-F
Notes: 7.
(Note 7) Packaging SOT-363 Shipping 3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K13
K13 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
Data Code Key Year Code Month Code
1998 J Jan 1
1999 K Feb 2
2000 L
2001 M Mar 3
2002 N Apr 4
YM
2003 P May 5
2004 R Jun 6
2005 S
2006 T Jul 7
2007 U Aug 8
2008 V Sep 9
2009 W Oct O
2010 X
2011 Y Nov N
2012 Z Dec D
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30121 Rev. 10 - 2
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MMDT4413
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